Geometry effects on the electronic properties of multi-open dots structures
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Ieee-inst Electrical Electronics Engineers Inc
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Article
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Acesso restrito
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Abstract
In this paper we show that the electronic properties of multi-open dots structures are strongly modified by even smalt changes in their geometries. Our discussion of these effects is done in terms of the interaction among localized states (dot-like) and extended states (channel-like), from which a Fano resonance situation arises.
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quantum dots, quantum effect semiconductor devices, quantum wires, resonant tunneling devices
Language
English
Citation
Ieee Transactions On Electron Devices. New York: Ieee-inst Electrical Electronics Engineers Inc, v. 45, n. 11, p. 2361-2364, 1998.
