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Geometry effects on the electronic properties of multi-open dots structures

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dc.contributor.authorFagotto, EAM
dc.contributor.authorRossi, S. M.
dc.contributor.authorMoschim, E.
dc.contributor.institutionUniversidade Estadual de Campinas (UNICAMP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2015-03-18T15:55:03Z
dc.date.available2015-03-18T15:55:03Z
dc.date.issued1998-11-01
dc.description.abstractIn this paper we show that the electronic properties of multi-open dots structures are strongly modified by even smalt changes in their geometries. Our discussion of these effects is done in terms of the interaction among localized states (dot-like) and extended states (channel-like), from which a Fano resonance situation arises.en
dc.description.affiliationState Univ Campinas, Sch Elect & Comp Engn, BR-1308197 Campinas, Brazil
dc.format.extent2361-2364
dc.identifierhttp://dx.doi.org/10.1109/16.726657
dc.identifier.citationIeee Transactions On Electron Devices. New York: Ieee-inst Electrical Electronics Engineers Inc, v. 45, n. 11, p. 2361-2364, 1998.
dc.identifier.doi10.1109/16.726657
dc.identifier.issn0018-9383
dc.identifier.urihttp://hdl.handle.net/11449/117065
dc.identifier.wosWOS:000076754800015
dc.language.isoeng
dc.publisherIeee-inst Electrical Electronics Engineers Inc
dc.relation.ispartofIeee Transactions On Electron Devices
dc.relation.ispartofjcr2.620
dc.relation.ispartofsjr0,839
dc.rights.accessRightsAcesso restrito
dc.sourceWeb of Science
dc.subjectquantum dotsen
dc.subjectquantum effect semiconductor devicesen
dc.subjectquantum wiresen
dc.subjectresonant tunneling devicesen
dc.titleGeometry effects on the electronic properties of multi-open dots structuresen
dc.typeArtigo
dcterms.licensehttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dcterms.rightsHolderIeee-inst Electrical Electronics Engineers Inc
dspace.entity.typePublication

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