Publicação: Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy
Carregando...
Data
2004-06-01
Orientador
Coorientador
Pós-graduação
Curso de graduação
Título da Revista
ISSN da Revista
Título de Volume
Editor
Sociedade Brasileira de Física
Tipo
Artigo
Direito de acesso
Acesso aberto
Resumo
In this work we investigated the optical and structural properties of GaAs/GaInP quantum wells (QW) grown by Chemical Beam Epitaxy (CBE). The samples were characterized by photoluminescence (PL), photoluminescence excitation (PLE) and transmission electron microscopy (TEM). Simulations of the quantum well potential profiles, using the Van de Walle-Martin model, supplemented by our experimental results, allowed us to associate the interface properties with the growth procedures. We concluded that a thin GaP layer grown at the interface improves its quality and also that the observed broad emission band in the PL spectrum is related to quaternary Ga1-xIn xAs1-yPy.
Descrição
Palavras-chave
Idioma
Inglês
Como citar
Brazilian Journal of Physics. Sociedade Brasileira de Física, v. 34, n. 2b, p. 620-622, 2004.
