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On the assessment of electrically active defects in high-mobility materials and devices

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dc.contributor.authorSimoen, Eddy
dc.contributor.authorEneman, Geert
dc.contributor.authorOliveira, Alberto Vinicius de
dc.contributor.authorNi, Kai
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorDer Agopian, Paula Ghedini [UNESP]
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorReed, Robert A.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorClaeys, Cor
dc.contributor.authorJiang, Y. L.
dc.contributor.authorTang, T. A.
dc.contributor.authorHuang, R.
dc.contributor.institutionIMEC
dc.contributor.institutionUniv Ghent
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionVanderbilt Univ
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionKatholieke Univ Leuven
dc.date.accessioned2019-10-04T12:15:15Z
dc.date.available2019-10-04T12:15:15Z
dc.date.issued2016-01-01
dc.description.abstractA possible strategy for the characterization of grown-in and processing-induced electrically active point and extended defects in high-mobility substrates is presented and illustrated by examples obtained on Ge as a prototype system.en
dc.description.affiliationIMEC, Kapeldreef 75, B-300 Leuven, Belgium
dc.description.affiliationUniv Ghent, Depart Solid State Sci, Krijgslaan 281 S1, B-9000 Ghent, Belgium
dc.description.affiliationUniv Sao Paulo, Sao Paulo, Brazil
dc.description.affiliationVanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA
dc.description.affiliationUniv Estadual Paulista, Sao Paulo, Brazil
dc.description.affiliationKatholieke Univ Leuven, EE Depart, Kasteelpk Arenberg 10, B-3001 Leuven, Belgium
dc.description.affiliationUnespUniv Estadual Paulista, Sao Paulo, Brazil
dc.format.extent300-303
dc.identifier.citation2016 13th Ieee International Conference On Solid-state And Integrated Circuit Technology (icsict). New York: Ieee, p. 300-303, 2016.
dc.identifier.urihttp://hdl.handle.net/11449/184616
dc.identifier.wosWOS:000478951000079
dc.language.isoeng
dc.publisherIeee
dc.relation.ispartof2016 13th Ieee International Conference On Solid-state And Integrated Circuit Technology (icsict)
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.titleOn the assessment of electrically active defects in high-mobility materials and devicesen
dc.typeTrabalho apresentado em evento
dcterms.licensehttp://www.ieee.org/publications_standards/publications/rights/rights_policies.html
dcterms.rightsHolderIeee
dspace.entity.typePublication

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