DC method for self-heating estimation applied to FinFET

doi:10.1109/SBMicro.2018.8511639

Author

Mori, C. A.B.
Agopian, P. G.D.
Martino, J. A.

Orcid

https://orcid.org/0000-0002-0886-7798

Date

2018-10-26

Type

Conference paper

Source

http://dx.doi.org/10.1109/SBMicro.2018.8511639

Access rights

Closed access

Metadata

Show full item record

Abstract

This paper reports an extension on the application of the DC method for the estimation of self-heating effects from planar to FinFET devices, verified through theoretical considerations and numerical simulations. In the worst case, a difference of 5.6% was observed on the estimation of the transistors channel temperature when compared to a traditional method.

How to cite this document

Mori, C. A.B.; Agopian, P. G.D.; Martino, J. A.. DC method for self-heating estimation applied to FinFET. 33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018. Available at: <http://hdl.handle.net/11449/187113>.

Keywords

FinFET

Self-heating effect

Semiconductor-On-Insulator

Language

English

Collections

Artigos