A sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor based on ZnO/AgNW Schottky contact
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Data
2021-01-01
Autores
Nogueira, Gabriel L.
Vieira, Douglas H.
Morais, Rogerio M.
Serbena, Jose P. M.
Seidel, Keli F.
Alves, Neri
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Resumo
Few works on solution-processed zinc oxide vertical transistors and electrolyte-gated transistors have shown the merits of both architectures. Here, we present an electrolyte-gated vertical field-effect transistor (EGVFET) based on a spray-deposited zinc oxide/silver nanowire (ZnO/AgNW) Schottky contact. The output curve shows that the device operates at a sub-1 V bias. Also, the electrolyte does not affect the diode cell, and the cyclic voltammetry of the capacitor cell does not indicate a faradic process between AgNW and the top-gate electrode. From the transfer curve, we extracted an ION/IOFF ratio of 104, an on-current density of 65.3 mA/cm2 and a normalized transconductance of 113.4 S/cm2. Our contribution places the ZnO-EGVFET structure on the front line to develop printed transistors without a high-resolution pattern.
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Palavras-chave
Field-effect transistor, Schottky diode, Spray-coating, Vertical electrolyte-gated transistor
Como citar
IEEE Electron Device Letters.