Heterojunction between Al2O3 and SnO2 thin films for application in transparent FET

dc.contributor.authorBoratto, Miguel Henrique [UNESP]
dc.contributor.authorAndrade Scalvi, Luis Vicente de [UNESP]
dc.contributor.authorBarbosa Maciel, Jorge Luiz [UNESP]
dc.contributor.authorSaeki, Margarida Juri [UNESP]
dc.contributor.authorFloriano, Emerson Aparecido [UNESP]
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.contributor.institutionCentro Universitário Eurípedes de Marília (UNIVEM)
dc.date.accessioned2015-11-03T15:30:00Z
dc.date.available2015-11-03T15:30:00Z
dc.date.issued2014-11-01
dc.description.abstractAlternative materials for use in electronic devices have grown interest in the past recent years. In this paper, the heterojunction SnO2/Al2O3 is tested concerning its use as a transparent insulating layer for use in FETs. The alumina layer is obtained by thermal annealing of metallic Al layer, deposited by resistive evaporation technique. Combination of undoped SnO2, deposited by sol-gel-dip-coating technique, and Al thermally annealed in O-2-rich atmosphere, leads to fair insulation when the number of aluminum oxide layers is 4, with 0.3% of the current lost through the gate terminal as leakage current. This insulation is not obtained for devices with alumina layer treated for long time, under room atmosphere, due to degradation of the insulating film and interfusion with the conduction channel even using Sb-doped SnO2. The annealing of Al deposited on soda-lime glass substrate leads also to the formation of a Si layer, crystallized at Substrate/Al2O3 interface. The conclusion is that for an efficient insulation the thermal annealing must be short and then, O-2-rich atmospheres are preferred.en
dc.description.affiliationEurípides Soares da Rocha University - UNIVEM, Marília, SP, Brazil
dc.description.affiliationUnespPhysics Department, FC, São Paulo State University - UNESP, Bauru, SP, Brazil
dc.description.affiliationUnespPost-Graduate Program in Materials Science and Technology, São Paulo State University - UNESP, Bauru, SP, Brazil
dc.description.affiliationUnespChemistry and Biochemistry Department, IBB, São Paulo State University - UNESP, Botucatu, SP, Brazil.
dc.description.sponsorshipConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.description.sponsorshipFundação para o Desenvolvimento da UNESP (FUNDUNESP)
dc.description.sponsorshipIdFUNDUNESP: 91312/13-DFP
dc.format.extent1420-1426
dc.identifierhttp://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392014000600009&lng=en&nrm=iso&tlng=en
dc.identifier.citationMaterials Research-ibero-american Journal Of Materials. Sao Carlos: Univ Fed Sao Carlos, Dept Engenharia Materials, v. 17, n. 6, p. 1420-1426, 2014.
dc.identifier.doi10.1590/1516-1439.285114
dc.identifier.fileS1516-14392014000600009.pdf
dc.identifier.issn1516-1439
dc.identifier.lattes7730719476451232
dc.identifier.lattes1802982806436894
dc.identifier.scieloS1516-14392014000600009
dc.identifier.urihttp://hdl.handle.net/11449/130183
dc.identifier.wosWOS:000349766900008
dc.language.isoeng
dc.publisherUniv Fed Sao Carlos, Dept Engenharia Materials
dc.relation.ispartofMaterials Research-ibero-american Journal Of Materials
dc.relation.ispartofjcr1.103
dc.relation.ispartofsjr0,398
dc.rights.accessRightsAcesso aberto
dc.sourceWeb of Science
dc.subjectAluminum oxideen
dc.subjectHeterojunctionen
dc.subjectTin dioxideen
dc.subjectFETen
dc.titleHeterojunction between Al2O3 and SnO2 thin films for application in transparent FETen
dc.typeArtigo
dcterms.rightsHolderUniv Fed Sao Carlos, Dept Engenharia Materials
unesp.author.lattes1802982806436894
unesp.author.orcid0000-0001-7055-0751[1]
unesp.author.orcid0000-0001-5762-6424[2]
unesp.campusUniversidade Estadual Paulista (Unesp), Instituto de Biociências, Botucatupt
unesp.campusUniversidade Estadual Paulista (Unesp), Faculdade de Ciências, Baurupt

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