Influence of the Quantum Effect on the GAA Nanosheet NMOS from 200oC down to -100oC
| dc.contributor.author | Leal, Joao V. C. | |
| dc.contributor.author | Agopian, Paula G. D. [UNESP] | |
| dc.contributor.author | Martino, Joao A. | |
| dc.contributor.institution | Universidade de São Paulo (USP) | |
| dc.contributor.institution | Universidade Estadual Paulista (UNESP) | |
| dc.date.accessioned | 2022-04-28T19:51:49Z | |
| dc.date.available | 2022-04-28T19:51:49Z | |
| dc.date.issued | 2021-01-01 | |
| dc.description.abstract | The quantum effect on the Gate-All-Around Nanosheet (GAA NS) NMOS devices are studied in this paper from 200oC down to -100oC. The experimental results for different channel lengths (down to 28 nm) are used from 200oC to room temperature and the behavior down to -100oC is extrapolated using calibrated TCAD simulation. The quantum confinement is present in all devices, but only for the height h = 5nm case its contribution for the threshold voltage increase is more relevant. This increment is constant with the temperature, but it becomes proportionally more important for higher temperatures due to the VT decrease in such conditions. The subthreshold swing is not affected by the quantum model and its value is close to (kT/q)ln(10) in all cases, with the best results obtained for the lowest device height. | en |
| dc.description.affiliation | University of Sao Paulo LSI/PSI/USP | |
| dc.description.affiliation | Sao Paulo State University Unesp, Sao Joao da Boa Vista | |
| dc.description.affiliationUnesp | Sao Paulo State University Unesp, Sao Joao da Boa Vista | |
| dc.identifier | http://dx.doi.org/10.1109/SBMicro50945.2021.9585738 | |
| dc.identifier.citation | SBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices. | |
| dc.identifier.doi | 10.1109/SBMicro50945.2021.9585738 | |
| dc.identifier.scopus | 2-s2.0-85126138208 | |
| dc.identifier.uri | http://hdl.handle.net/11449/223619 | |
| dc.language.iso | eng | |
| dc.relation.ispartof | SBMicro 2021 - 35th Symposium on Microelectronics Technology and Devices | |
| dc.source | Scopus | |
| dc.subject | Gaa | |
| dc.subject | Nanosheet | |
| dc.subject | Quantum effect | |
| dc.subject | Subthreshold swing | |
| dc.subject | Temperature | |
| dc.subject | Threshold voltage | |
| dc.title | Influence of the Quantum Effect on the GAA Nanosheet NMOS from 200oC down to -100oC | en |
| dc.type | Trabalho apresentado em evento |