Fabrication and characterization of GeO2-PbO optical waveguides
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This work presents studies of GeO2-PbO thin films deposited by RF Sputtering for fabrication of rib-waveguide. GeO2-PbO vitreous targets were prepared melting the reagents in alumina crucible. Thin films were deposited at room temperature using pure Ar plasma, at 5 mTorr pressure and RF power of 40 W on substrates of (100) silicon wafers. Rutherford Backscattering Spectroscopy (RBS) analyses were employed for the determination of the chemical elements present in the GeO2-PbO film. Geometry and sidewall of the waveguides were investigated by Scanning Electron Microscopy (SEM). The mode propagation in the waveguide structure of GeO2-PbO thin films was analyzed using an integrated optic simulation software to obtain a monomode propagation. © The Electrochemical Society.
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Alumina crucible, Ar plasmas, Mode propagation, Rf-power, Rf-sputtering, Room temperature, SEM, Simulation software, Waveguide structure, Chemical elements, Computer software, Microelectronics, Rutherford backscattering spectroscopy, Scanning electron microscopy, Semiconducting silicon compounds, Silicon wafers, Thin films, Waveguides
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Inglês
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ECS Transactions, v. 23, n. 1, p. 507-513, 2009.
