Publicação:
Proposal of a p-type Back-Enhanced Tunnel Field Effect Transistor

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dc.contributor.authorMori, C. A.B.
dc.contributor.authorAgopian, P. G.D. [UNESP]
dc.contributor.authorMartino, J. A.
dc.contributor.institutionUniversidade de São Paulo (USP)
dc.contributor.institutionUniversidade Estadual Paulista (Unesp)
dc.date.accessioned2020-12-12T01:16:45Z
dc.date.available2020-12-12T01:16:45Z
dc.date.issued2019-04-01
dc.description.abstractIn this paper we propose a new p-type Tunnel Field Effect Transistor based on the planar Back-Enhanced structure (BE-pTFET), by removing the p-type drain doping and using a back bias to obtain similar on-state behaviors to those of a conventional pTFET, while eliminating the ambipolar effect.en
dc.description.affiliationLSI/PSI/USP University of Sao Paulo
dc.description.affiliationSao Paulo State University (UNESP)
dc.description.affiliationUnespSao Paulo State University (UNESP)
dc.identifierhttp://dx.doi.org/10.1109/EUROSOI-ULIS45800.2019.9041908
dc.identifier.citation2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019.
dc.identifier.doi10.1109/EUROSOI-ULIS45800.2019.9041908
dc.identifier.scopus2-s2.0-85080744450
dc.identifier.urihttp://hdl.handle.net/11449/198580
dc.language.isoeng
dc.relation.ispartof2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2019
dc.sourceScopus
dc.subjectSilicon-On-Insulator (SOI)
dc.subjectTunnel Field Effect Transistor (TFET)
dc.subjectUltra-Thin Body and Buried oxide (UTBB)
dc.titleProposal of a p-type Back-Enhanced Tunnel Field Effect Transistoren
dc.typeTrabalho apresentado em evento
dspace.entity.typePublication

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